MubarakKhan
Newbie level 4
I'm reading the following paper about SNAPBACK
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In the case of positive ESD stress, the VGBNPN
is triggered when the voltage on the collector electrode reaches
the base–collector breakdown voltage. The resulting avalanche
current flowing through the internal base resistance then forward-biases the base-emitter junction and triggers the n-p-n
bipolar transistor on. Once the n-p-n turns on, the avalanche and
bipolar effects combine resulting in the decrease of collector
voltage down to the snapback holding voltage.
hear a decrease in voltage to snapback voltage means a quick drain of collecter voltage or something else.
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In the case of positive ESD stress, the VGBNPN
is triggered when the voltage on the collector electrode reaches
the base–collector breakdown voltage. The resulting avalanche
current flowing through the internal base resistance then forward-biases the base-emitter junction and triggers the n-p-n
bipolar transistor on. Once the n-p-n turns on, the avalanche and
bipolar effects combine resulting in the decrease of collector
voltage down to the snapback holding voltage.
hear a decrease in voltage to snapback voltage means a quick drain of collecter voltage or something else.
