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  1. #1
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    [moved] Value of lateral electric field(E0) in UMC 65 technology

    I am working on UMC 65 technology. My area of research is the reliability of circuits. In order to find out the degraded value of threshold voltage from a model equation, I need the value of the lateral electric field(E0) in UMC 65 nm technology. kindly suggest me.

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  2. #2
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    Re: [moved] Value of lateral electric field(E0) in UMC 65 technology

    If you're talking the true lateral electric field, that's just Vds/Leff.
    But at the drain, the gate-drain field is also an element of hot
    carrier generation / steering / degradation (canonical worst case
    HCE experiment bias is Vds=Vddmax, Vgs=Vddmax/2). The field
    that drives all of that is the vector sum, pulling hot carriers into
    the spacer oxide and gate ox.

    Now determining just what Leff is, can be tricky (not helped by
    an industry behavior of calling technologies by non-physical "L"
    for marketing purposes).



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  3. #3
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    Re: [moved] Value of lateral electric field(E0) in UMC 65 technology

    Lateral electric field in a MOSFET is not constant, it has a sharp peak near the drain.
    But I doubt that such a deep microscopic characteristic, even if known, would be used in an empirical reliability/degradation model.
    The foundries normally provide degradation models, that are (or supposed to be) extracted form the reliability measurements.



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