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  1. #1
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    Donors , Acceptors and Traps

    How the impurities are different from traps ?

    Also in acceptor impurity, can the electrons from the ionized boron acceptor level jump to Conduction Band at 300 K?

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  2. #2
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    Re: Donors , Acceptors and Traps

    To add it my question, it’s Si doped with Boron. So question is can electrons from acceptor level jump to CB ?



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  3. #3
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    Re: Donors , Acceptors and Traps

    Impurities may or may not be trap sites.

    Dopant is desired to be substituted fully into the lattice
    and then it becomes electrically active (in a good way).
    Semiconductor properties are about the lattice, not the
    individual atoms here or there.

    Unsubstituted (interstitial) dopant atoms are a disorder
    and disorder is what gives you the anomalous short
    range order that has differing potential-pockets (traps).
    Other impurities matter as well; high end audio folks
    specify low-oxygen starting material and so on.

    An electron that does "jump to CB" in P-type will be a
    minority carrier and recombine whence it came in short
    order. How short, is doping dependent.



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