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Donors , Acceptors and Traps

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Robotduck

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How the impurities are different from traps ?

Also in acceptor impurity, can the electrons from the ionized boron acceptor level jump to Conduction Band at 300 K?
 

To add it my question, it’s Si doped with Boron. So question is can electrons from acceptor level jump to CB ?
 

Impurities may or may not be trap sites.

Dopant is desired to be substituted fully into the lattice
and then it becomes electrically active (in a good way).
Semiconductor properties are about the lattice, not the
individual atoms here or there.

Unsubstituted (interstitial) dopant atoms are a disorder
and disorder is what gives you the anomalous short
range order that has differing potential-pockets (traps).
Other impurities matter as well; high end audio folks
specify low-oxygen starting material and so on.

An electron that does "jump to CB" in P-type will be a
minority carrier and recombine whence it came in short
order. How short, is doping dependent.
 

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