Assume n type semiconductor:
1) Can the fermi level of metal change when it makes contact with the Semiconductor ? What assumptions do we make in ideal situation ?
2) Is the Schottky Barrier in Metal Semiconductor contact remains constant with an applied forward or reverse voltage ?
3) On what reasons, do we say that the metal semiconductor junction is forward biased when applying positive on the metal side and negative at the semiconductor side, since both have electrons as a majority carriers .

Thank you in advance !!