+ Post New Thread
Results 1 to 6 of 6

15th July 2019, 10:45 #1
 Join Date
 Jan 2018
 Posts
 220
 Helped
 1 / 1
 Points
 1,327
 Level
 8
MOSFET Speed and power tradeoff
Hi I was reading this document and came across some confusion.
https://www.uio.no/studier/emner/mat...cting_uCox.pdf
https://www.google.com/search?q=capa...0OqxKbzpedvkM:
1.As per the above curve, MOS capacitance is small in depletion mode (when 0
2.When Vgs>Vt, the MOSFET enters into strong inversion mode (Saturation region). Then based on chose Vgs value Id is driven, which decides the Power consumed by the device. The more is the chosen Vgs, the more will be power consumption. In this the MOS capacitance is higher than the above case, so less speed.
But in the document it is said that
Always put your transistor in moderateinversion region (V OV ≈ 150250 mV) to make a compromise between speed and power consumption. If you need more speed → Strong inversion region. If you want low power → weak inversion
Can someone tell me
1.what are exact range for weak, moderate and strong inversion modes.
2.As per my argument, we get more speed in depletion or weak inversion mode but as per the document it is strong inversion region. Which is correct and why?

Advertisement

16th July 2019, 06:33 #2
 Join Date
 Mar 2016
 Posts
 10
 Helped
 7 / 7
 Points
 764
 Level
 6
Re: MOSFET Speed and power tradeoff
Dear circuitking,
the range of the MOS operating region can be determined by gm over Id ratio (gm/ID=2/(VGSVT)). Hence, if gm is in the range 510 S/A the MOS operates in strong inversion, the range 1015 S/A is the moderate inversion and 1525 S/A is the weak inversion. The MOS exhibits the maximum speed in strong inversion because it depends by the total gate capacitance that is minimum in this region. I suggest to read about the gm/id methodology in which the mos performance are arranged in lookup tables as function of the gm/ID ratio.
I hope that it is useful
Regards
2 members found this post helpful.

Advertisement

18th July 2019, 06:17 #3
 Join Date
 Jan 2019
 Location
 Ireland
 Posts
 206
 Helped
 86 / 86
 Points
 1,470
 Level
 8
Re: MOSFET Speed and power tradeoff
For a long channel MOSFET, the
If you increase the overdrive, then your transit frequency goes up. But because transconductance is given by , increasing overdrive decreases the gm(of course make sure you don't change the current).

Advertisement

20th July 2019, 14:10 #4
 Join Date
 Mar 2015
 Location
 USA
 Posts
 111
 Helped
 20 / 20
 Points
 1,388
 Level
 8
Re: MOSFET Speed and power tradeoff
Just to clarify something, strong inversion is not the same as saturation. Strong inversion is the point where you have significantly overcome the surface potential and have created an inversion channel between the drain/source. The gate voltage applied is what creates this channel—that is why SI is definite by a gate voltage. Saturation is given by the drain to source voltage, vov=vgsvt.
If you do not have significant vds, you will be in strong inversion, triode. If you surpass the saturation voltage then you will be in strong inversion, saturation.

20th July 2019, 14:27 #5
 Join Date
 Jan 2019
 Location
 Ireland
 Posts
 206
 Helped
 86 / 86
 Points
 1,470
 Level
 8
Re: MOSFET Speed and power tradeoff
I don't know why the equations came as elektroda.pl :(
But here is the answer with the expressions:
For a long channel MOSFET, the f_T = \frac{1.5\mu}{2\pi L^2}(V_{gs}V_{th}}
If you increase the overdrive, then your transit frequency goes up. But because transconductance is given by \frac{2I_D}{V_{gs}V_{th}}, increasing overdrive decreases the gm(of course make sure you don't change the current).

Advertisement

20th July 2019, 17:04 #6
 Join Date
 Apr 2011
 Location
 Minneapolis, Minnesota, USA
 Posts
 13,014
 Helped
 2587 / 2587
 Points
 53,227
 Level
 56
+ Post New Thread
Please login