+ Post New Thread
Results 1 to 12 of 12

11th July 2019, 11:38 #1
 Join Date
 May 2018
 Posts
 42
 Helped
 0 / 0
 Points
 583
 Level
 5
MOSFET linear and saturation region operation
Hi,
N channel MOSFET Saturation operation condition is Vds > (Vgs  Vth).
But in saturation region, MOSFET will act like closed switch. hence Vds is approximately 0V(Rds*I). Examble VGS = 10V and VTH is 2V, and if switch is closed means VDS= 0V, but above formula is not satisfied.
Anyone kindly clarify this ?
And How to drive the N channel MOSFET to act as variable resistor ?
I saw the condition Vds < (Vgs Vth), but how to calculate Vgs for required resistor ?

11th July 2019, 13:28 #2
 Join Date
 Jan 2019
 Posts
 575
 Helped
 150 / 150
 Points
 3,155
 Level
 13
Re: MOSFET linear and saturation region operation
i searched on "international rectifier fet gate charge" (google)
look at
International rectifier power mosfet basics
figure 13
Power MOSFET Basics  Infineon Technologies
https://www.google.com/url?sa=t&rct=...VIhaoOEA610FJ
International rectifier application note AN944
figure 5
Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs ...
https://www.google.com/url?sa=t&rct=...fZe6deoAi2juEK
those figures show the behavior of fet as a function of gate charge
there are clearly indicated regions  off, turning on, linear, and on (saturated)
to make the fet act like a variable resistor, apply a feedback circuit to control the gate based on the desired ???
sometimes it helps to add a resistor across the drain source to be the maximum resistance
then, as the fet moves through the linear regions, the resistance drops
the saturated fet gives the lower limit of the resistance
1 members found this post helpful.

Advertisement

11th July 2019, 13:43 #3
 Join Date
 Jan 2016
 Posts
 89
 Helped
 0 / 0
 Points
 1,187
 Level
 7
Re: MOSFET linear and saturation region operation
MOSFET behaves like a resistor in linear region with resistance = 1/(un*cox*(W/L)*(Vgs  Vth)) for small values of Vds.

15th July 2019, 15:58 #4
 Join Date
 Mar 2016
 Posts
 46
 Helped
 1 / 1
 Points
 894
 Level
 6
Re: MOSFET linear and saturation region operation
MOSFET acts like a switch and it is opened when vgs < vth but closed when vgs > vth.
From simple MOSFET equation, ignoring body effect and etc.
When Vds < vgs  vth it acts like a variable resistor. Current allowed to pass through will be directly proportional to Vds.
But when Vds > vgs  vth, it will be saturated and the current allowed to pass through will be saturated, no matter how high is the Vds.

15th July 2019, 18:12 #5
 Join Date
 Aug 2016
 Posts
 549
 Helped
 93 / 93
 Points
 3,176
 Level
 13
Re: MOSFET linear and saturation region operation
Hi,
In saturation region, with the constraint you provided, namely: Vg > Vth and Vds > Vds  Vth, the MOSFET is an amplifier.
This is a major difference between the MOSFET and the BJT.Last edited by Akanimo; 15th July 2019 at 18:32.

Akanimo.
1 members found this post helpful.

Advertisement

16th July 2019, 17:27 #6
 Join Date
 Feb 2012
 Location
 L.A. USA Zulu 8
 Posts
 3,712
 Helped
 883 / 883
 Points
 19,361
 Level
 33
Re: MOSFET linear and saturation region operation
Perhaps this diagram from Wikipedia will help clarify:
And How to drive the N channel MOSFET to act as variable resistor ?
I saw the condition Vds < (Vgs Vth), but how to calculate Vgs for required resistor ?
One way is to measure the transistor you have to determine the resistance versus Vgs curve.Zapper
Curmudgeon Elektroniker
1 members found this post helpful.

16th July 2019, 17:35 #7
 Join Date
 Feb 2014
 Posts
 1,000
 Helped
 349 / 349
 Points
 7,028
 Level
 19
Re: MOSFET linear and saturation region operation
One question I have when someone understands this stuff is why?
A mosftet goes from 'as off as it gets' > partly on > 'more on' > 'mostly on' > 'as on as it gets' as Vgs increases. But the Vgs threshold is so widely specified you can't count on anything in the linear region. So the exact relationship and the equations governing it are typically irrelevant. I've designed a lot of linear circuits and I've certainly never referenced any.
1 members found this post helpful.

16th July 2019, 18:51 #8
 Join Date
 Jul 2019
 Posts
 10
 Helped
 0 / 0
 Points
 158
 Level
 2
Re: MOSFET linear and saturation region operation
The MOSFET acts as a zerovoltage drop device (ideally) IF it is connected to a load. If the MOSFET is by itself, it will of course have a voltage at the drain.

16th July 2019, 20:14 #9
 Join Date
 Feb 2012
 Location
 L.A. USA Zulu 8
 Posts
 3,712
 Helped
 883 / 883
 Points
 19,361
 Level
 33
Re: MOSFET linear and saturation region operation
Because that describes how the MOSFET responds to the gatesource voltage in the linear region.
Just because you've never used that info doesn't mean noone does.
Besides, the info in the "linear region" is typically used when the MOSFET is used as a switch or variable resistance.
For linear (i.e. AC) amplifiers the MOSFET typically operates in the saturated region.
(It can be confusing because that's more or less opposite of the BJT definitions for the two operating regions).Zapper
Curmudgeon Elektroniker

Advertisement

16th July 2019, 21:05 #10
 Join Date
 Feb 2014
 Posts
 1,000
 Helped
 349 / 349
 Points
 7,028
 Level
 19
Re: MOSFET linear and saturation region operation
Eh my point is that once you wrap it with feedback the exact equations become irrelevant.
And if you don't wrap it in feedback part variations mean you better not care about the exact relationship either.
Both cases are well served by understanding the shapes of the curves but don't necessitate plugging numbers into the equations.

17th July 2019, 19:53 #11
 Join Date
 Feb 2012
 Location
 L.A. USA Zulu 8
 Posts
 3,712
 Helped
 883 / 883
 Points
 19,361
 Level
 33
Re: MOSFET linear and saturation region operation
Zapper
Curmudgeon Elektroniker

17th July 2019, 20:21 #12
 Join Date
 Jul 2010
 Location
 Sweden
 Posts
 1,061
 Helped
 403 / 403
 Points
 7,907
 Level
 21
Re: MOSFET linear and saturation region operation
I have designed power outputs with MOSFET's where the short circuit protection was implemented using the Ids/Vgs diagram in the datasheet.
By not switching on the MOSFET to reach the minimum Rds, it will act as a current limiter.
To allow for temperature and individual variations, we adjusted Vgs so the maximum current in the MOSFET would nominally be 3 times the maximum load current.
When a short circuit occurs, the voltage will increase a lot over the MOSFET and that is very easy to detect, and Vgs can be switched off early enough to keep the MOSFET within the SOA (Safe Operating Area).
+ Post New Thread
Please login