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    Paper showing intrinsic gain vs. minimum channel length evolution?

    Hi! Does anybody know of any recent paper/book showing the evolution of transistor intrinsic gain (gm*ro) with minimum channel length (=technology node)?

    So far I've only found the graph below [1], but I'm looking for other references showing the same trend (i.e. that things get better in 22nm and below (FinFETs)).

    Thanks in advance for any help!

    [1] Holt, "Moore’s Law: A Path Going Forward", ISSCC'16

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  2. #2
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    Re: Paper showing intrinsic gain vs. minimum channel length evolution?

    There's a lot more to it than just u0CoxW/L (and three, at
    least, moving at once for different influences).

    Advanced technologies add all sorts of features to get an
    "acceptable" reliability - LDD and halo details in the source
    region can degrade gm a lot (you'll see RF folks fight for
    their own, "not digital", transistor since they don't care
    about DC leakage in an "off" device and can't stand source
    resistance).



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