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diode ESD IO with proper size

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shanmei

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For the diode based EDS IO, what is a good size?

TSMC180 process. For building each diode, there are total 3 figures for each diode. In each figure, the length is 30um and the width is 2um. Is the size enough to bear 2K HBM ESD test? Thanks.
 

What's the difference between these 3? Should have a low series resistance.

I think the size of 60µm2 is quite sufficient for the 2kV HBM ESD test.
 

erikl said:
What's the difference between these 3? Should have a low series resistance.

I think the size of 60µm2 is quite sufficient for the 2kV HBM ESD test.
Click to expand...



They are three same figures, so the total area is 2*30*3=180 µm2. Thanks.

- - - Updated - - -

erikl said:
What's the difference between these 3? Should have a low series resistance.

I think the size of 60µm2 is quite sufficient for the 2kV HBM ESD test.
Click to expand...

Some the transistor based diode ( the gate is short to source) ESD has more than 400 µm2 area. The 400 µm2 built with transistor based diode is much larger than 60 µm2 built with simple diode(built with the diffusion and p+ and n+, without poly gate) .

Whether the ESD capability of the transistor based diode ESD IO is worse than the simple diode ESD IO? Thanks.
 

shanmei said:
Whether the ESD capability of the transistor based diode ESD IO is worse than the simple diode ESD IO? Thanks.
Click to expand...
There may be more ESD jeopardy than the 2kV HBM test: other possible ES sources could intrude with more energy, albeit less voltage. Transistor based ESD "diodes" limit their surge current, however could tolerate higher discharge energy.
 
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