Shishira
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Hi all,
I am trying to design FC-OTA (single ended o/p), I was not given any specifications so I made one referring few papers.
Specs:
vdd = 1.8V (by technology)
vthn/p = +200mv/ - 210mv
Kn = 200µA/V² Kp = 60µA/V²
SR= 20V/µs
cL = 500fF
gbw = 100Mhz
ICMR = 0.6 to 1.6 (nmos diff pair)
o/p swing = 0.3 to 1.5
gain = 55 db.
Q1] Are these specifications reasonable to start a design?
Q2] I followed steps from Allen holberg and designed the schematic as per above specs. But, my pmos current cources M4 & M5(above nmos diff pair) & its bias transistor are in triode region. **broken link removed**All other transistors are in region 2.
Q3]My circuit is giving gain of 60 db and gbw = 40 Mhz, why is there a huge drop in gbw.
I am trying to design FC-OTA (single ended o/p), I was not given any specifications so I made one referring few papers.
Specs:
vdd = 1.8V (by technology)
vthn/p = +200mv/ - 210mv
Kn = 200µA/V² Kp = 60µA/V²
SR= 20V/µs
cL = 500fF
gbw = 100Mhz
ICMR = 0.6 to 1.6 (nmos diff pair)
o/p swing = 0.3 to 1.5
gain = 55 db.
Q1] Are these specifications reasonable to start a design?
Q2] I followed steps from Allen holberg and designed the schematic as per above specs. But, my pmos current cources M4 & M5(above nmos diff pair) & its bias transistor are in triode region. **broken link removed**All other transistors are in region 2.
Q3]My circuit is giving gain of 60 db and gbw = 40 Mhz, why is there a huge drop in gbw.