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[SOLVED] [moved] Conventional well device and flipped well device

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revoorsandeep

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Hi,

FDSOI technology provides us both flip well and conventional well device . Can any one explain me when to use conventional well and when to use flip well device?
 

I have no idea what your foundry means by "flip well"
specifically, but if you were to swap Nwell for Pwell on
a NMOS transistor you'd end up with a depletion mode
FET, which has some applications (for example, a
normally-on RF switch, cascode "infinite height" self
biasing stacks, on-chip LDOs, ....
 

Hi dick ,
Thanks for the reply.

In fdsoi channel and well are seperated by buried oxide layer. Can you explain me how by replacing Pwell by nwell will end up with depletion mode fet.
 

If true, then "well" means something different to you
and your foundry, than most CMOS people. I'd want a
foundry's device cross-section before believing you.
 

Capture.JPG


This was the cross section of the foundries mosfet

- - - Updated - - -

Hi dick,

I knew one thing i.e to use advantage of bulk biasing we may choose conventional or flipped. Please explain me if there are any other advantages.
 

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