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Whats the collector to emitter resistance when gate is driven to max for an igbt? Does this resistance decrease with parts which handle greater continuous currents?
Re: is there a substantial IGBT collector emitter resistance
There is an ON volt drop, anywhere from 0.9V for old slow devices to 2.8V for modern faster devices, and a lot in-between, you can calc the equivalent R, but really Von is what you should be interested in, obviously for zero current there is zero Von, but above trivial currents the Von is roughly constant and goes up a bit with current due to internal R of the silicon, bond wires etc, having a Von that goes up with temp is useful for paralleling devices. some do have a neg Von temp co-efficient...
Due to the structure and gate drive of IGBT's there is a max current they will plateau at for a given gate voltage and applied Vcc, this is exploited for their 10uS short ckt rating - not all have this so beware ...
you have calculated the effective resistance at 120A (assuming you know the Vce @ 120A at 80deg C say) at 20A the effective resistance is higher - you can graph a few of the points if you wish.
For power calculations, you need the ON volt drop x the current, assuming an effective R will give you wayward results ...
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