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Extracting-transistor-characteristic parameter from BSIM 4 models

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Re: Extracting transistor characteristic parameter from BSIM 4 model

It's well worth considering that BSIM4 is used -because-
calculating according to classical long channel MOSFET
equations doesn't work very well at advanced nodes.
Like 0.5um and lower.

Your model cards have Tox so you could calculate Cox
if you knew the material constant (E=3.9 for silica, but
this is not necessarily what you have in hand anymore -
high-K gate stacks, poly depletion, etc.).

Your model card has U0 as well, already. But also some
fellow travelers which probably bend it some. You could
read the fine skinny modeling manual to see what those
(UA, UB) might be up to.
 

Re: Extracting transistor characteristic parameter from BSIM 4 model

For my interest: Why do you need the parameters?

Isn't the requirement on gm and r0 given by the specification of your component or the impact that they cause on the output signal, or so? Based on that you will get a performance that you have to obtain and as indicated in the previous reply, you would - since the hand calculations do not really hold - iterate the currents/sizes until you reach the requirements.

Even if you find a u0,Cox and can calculate the requirements, there would still be significant variations over operating conditions, linearized region, and corners, where you would have to adapt a slightly different methodology.

(Maybe I'm stating the obvious, but yet...)
 
Re: Extracting transistor characteristic parameter from BSIM 4 model

Cox = e0*er / Tox

Where is the missing parameter "area" ? I suppose capacitance equation is something like C = e*A/d
 

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