deveshkm
Member level 4
Hi,
Please comment on the above biasing methodology for PMOS transistors
At the top (folding point) I have biased using simple current mirror (PMOS) with the current reference designed for reducing temperature variation.
The current mirror is easily implemented as source terminals are at Vdd.
Obviously , the current through upper and lower PMOS pairs carry different currents.
For the lower PMOS, I have biased using CMFB (split transistor)
Is it okay to NOT bias the upper PMOS BUT the lower PMOS transistors using CMFB?