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Mismatch in BJT vs Mismatch in MOS

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dzafar

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Why is mismatch in BJT << mismatch in MOS?
 

Does your question have to do with fabricating devices on a wafer?

Adjusting gain of a BJT, vs MOS?

Controlling a BJT via current, vs control of MOS via voltage?

Mismatch in a current mirror?

See the list of related threads at the bottom of this colum.
 

It is in regards to current mirror. We have a table that compares npn vs pnp and nmos vs pmos current mirrors. A point says:

ΔV_BE mismatch in BJTs is much smaller than corresponding ΔV_T mismatch in MOS transistors.

I don't understand the reason.
 

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