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    About short channel effect.

    if there anyone who knows that at what length the short channel effect will disappear

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    Re: About short channel effect.

    This question hasn't a simple answer.

    For example, a mobility reduction due to carrier velocity saturation starts at electric fields higher than so called critical field equal to 0.8 MV/m and 1.95 MV/m for electrons and holes respectively. It means that for given channel length like 100nm it becomes important for Vds (or Vdsat for mosfets working in penthode region) higher than ca 80 or 195 mV. Similar DIBL is related with so called characteristic length varied with process but related also to Vds voltage.

    Also, some SCE like mobility degradation caused by vertical field is related to gate oxide thickness so increasing channel length doesn't help with this.


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  3. #3
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    Re: About short channel effect.

    Quote Originally Posted by Dominik Przyborowski View Post
    This question hasn't a simple answer.

    For example, a mobility reduction due to carrier velocity saturation starts at electric fields higher than so called critical field equal to 0.8 MV/m and 1.95 MV/m for electrons and holes respectively. It means that for given channel length like 100nm it becomes important for Vds (or Vdsat for mosfets working in penthode region) higher than ca 80 or 195 mV. Similar DIBL is related with so called characteristic length varied with process but related also to Vds voltage.

    Also, some SCE like mobility degradation caused by vertical field is related to gate oxide thickness so increasing channel length doesn't help with this.
    yeah. i read about those in the razavi. one of my homework ask me to find a length that SCE will not be a problem with the mos. so should i use SPICE to set the sweep of length v.s what kind of parameter so that i can find a length that will no cause SCE?
    Last edited by shawn07023; 12th October 2016 at 16:23.



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  4. #4
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    Re: About short channel effect.

    Run from process minimum to absurdly long, and look for where the
    (say) IDsat vs 1/L curve breaks away from linear (pick a tolerance).



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