T
treez
Guest
Hello,
The attached method for driving the high side FETs in a high power LLC converter is the best way to do it, do you agree?.
(it uses a bipolar gate drive transformer)
The method of using a bootstrap high side drive IC is too unreliable and succeptible to noise issues, as discussed by Dr Ridley.
The attached method for driving the high side FETs in a high power LLC converter is the best way to do it, do you agree?.
(it uses a bipolar gate drive transformer)
The method of using a bootstrap high side drive IC is too unreliable and succeptible to noise issues, as discussed by Dr Ridley.