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why InGaAs photodiode always small than silicon photodiode?

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Hi all

Does anybody know why InGaAs photodiode is always small than silicon photodiode?

For example, **broken link removed** from hamamatsu, it has diameter of 1mm, and 90pF capacitance. and cut-off frenquency is 35MHz.

while for a silicon photodiode, for example, **broken link removed**, diameter is 1.2mm, 3pF capacitance, and cut-off frenqucy is 100Mhz.

So, almost the same size, but a huge difference in Capacitance.

is it because the InGaAs has a large "permittivity" than silicon? I searched, but I could not find the the value of permittivity for InGaAs.
 

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