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No changes happened after the introduction of traps into HfO2 of NMOS

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wujue123

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Hi,

I am trying to analysis the I-V curves differences before and after I involve traps into HfO2 of nmosfet. The nmos has 30nm channel length and High-K material (HfO2). But I can not find the difference. I think the code I used to input traps did not work. Is anyone familiar with this issue. Any example of traps simulation is also helpful. Thank you.
 

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