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    What is the significance of double dummy poly on both sides for every transistor?

    What is the significance of double dummy poly on both sides for every transistor?

    Is it just to reduce the effect the of STI ?

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    Re: Double dummy poly in deep submicron technologies

    Quote Originally Posted by cmoslayoutguide View Post
    Is it .... to reduce the effect the of STI ?
    Yes, and additionally to allow for a consistent environment if matching is important.


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    Re: Double dummy poly in deep submicron technologies

    Quote Originally Posted by erikl View Post
    Yes, and additionally to allow for a consistent environment if matching is important.


    These dummy polys will help to prepare the mask or these are also part of process poly?



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    Re: Double dummy poly in deep submicron technologies

    Quote Originally Posted by cmoslayoutguide View Post
    These dummy polys will help to prepare the mask or these are also part of process poly?
    They are processed like any other poly, i.e. they are real existent. That's the best way to provide a consistent environment in the surroundings - as well as relieving STI stress (mainly due to the additional distance).



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    Re: Double dummy poly in deep submicron technologies

    Quote Originally Posted by cmoslayoutguide View Post
    What is the significance of double dummy poly on both sides for every transistor?

    Is it just to reduce the effect the of STI ?
    poly is formed by Uv light. duo to diffraction at grid of UV light. another gate will form near to actual gate . to avoid that we r placing dummy poly . this will cancel the additional poly by distractive interferes
    Last edited by velkumargn; 7th November 2013 at 09:09.



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    Re: Double dummy poly in deep submicron technologies

    Hi velkumargn


    Could you just brief about what you said ?


    Regards
    Kishan.B



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    Re: Double dummy poly in deep submicron technologies

    193nm lithographic process near UV light grid light will diffracted, so UV will go and form gate at some other place. If drain or source will come that place additional device will form with DRC. to avoid that we add dummy poly . Due to distractive interference it will cancel each other



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