Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

[SOLVED] setting initial voltage in cadence for designing SRAM

Status
Not open for further replies.

avishek_sinha_roy

Junior Member level 1
Joined
Oct 20, 2011
Messages
15
Helped
0
Reputation
0
Reaction score
0
Trophy points
1,281
Activity points
1,402
i have designed a static RAM circuit(32 nm). I wanted to perform simulation for read operation. So i needed to set the bit lines to vdd(0.9v). I used nodeset command to set the initial volatge of bitline to vdd, but the initial voltages remain upto 0.35 volt. So can u tell me what is going wrong or should i use another command if any to set the initial volatges of bit line to vdd i.e 0.9v. THANX IN ADVANCE.........
 

IC can be fine for a single cell or a few, but tedious for a RAM
block of much size.

You might consider adding trivial conductances to the RAM
unit cell, like 1E9 up on one node of the cross-coupled pair
and 1E9 down on the other. This might have enough influence
to steer the decision yet not impact operation (regen gain,
timing, leakage) meaningfully. If the resistor conductance is
greater than the "off" FET conductance then it ought to be
effective.
 
Status
Not open for further replies.

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top