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Speed of conventional silicon MOSFET is limited by channel resistance. Velocity of electrons increase with increase applied field, but when a strong enough electric field is applied, the carrier velocity in the semiconductor reaches a maximum value, saturation velocity. When this happens, the semiconductor is said to be in a state of velocity saturation. As the applied electric field increases from that point, the carrier velocity no longer increases because the carriers lose energy through increased levels of interaction with the lattice, by emitting phonons and even photons as soon as the carrier energy is large enough to do so. This in turn limits speed of the transistor. So an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure. This is called Carbon nanotube field-effect transistor.
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