which transistor provide more gain...Enhancement Mosfet or Depletion Mosfet?

which transistor provide more gain...Enhancement Mosfet or Depletion Mosfet? Please explain with solid reasons....

In Enhancement mode device, There is no channel between source and drain when Gate to source voltage is zero. Increasing voltage on gate will enhances the free carriers below the gate & creates the channel. While in case of Depletion mode device that are doped so that a channel exists even with zero voltage from gate to source. In order to control the channel, a negative voltage is applied to the gate (for an n-channel device), depleting the channel, which reduces the current flow through the device. In essence, the depletion-mode device is equivalent to a normally closed (on) switch, while the enhancement-mode device is equivalent to a normally open (off) switch.

So the only difference between Enhancement and Depletion mode MOSFET is the channel dopping.

Now the gain of transistor depends on transconductance. Transconductance is the change in the drain/source current divided by the change in the gate/source voltage with a constant drain/source voltage. The transconductance of the MOSFET is proportional to hole or electron mobility (depending on device type) as the drain/source current depends on the carrier mobility. Mobility of carriers is reduce by channel dopping(High dopping will increase scattering rate of carriers).

So for the same technology Enhancement MOSFET will have higher gain than Depletion MOSFET.