Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.
Carrier mobility reduction essentially occurs in strong inversion due to velocity saturation effects, i.e. in short channel devices, so depends much more on the length (L) than on W. See e.g. D. Binkley "Tradeoffs and Optimization in Analog CMOS Design", Chap. 2.4.3. Here's a clipping from the text (p. 16) :
"A primary effect is velocity saturation associated with the loss of effective carrier mobility caused by a high tangential or horizontal electric field between the pinched-off drain (again, saturation operation is considered) and source."
You should also recognize that you are talking -surface- mobility
in a MOSFET, which is not the same as bulk carrier mobility in a
"long" bulk device at all. You have surface scattering and a
constrained Z dimension.
This site uses cookies to help personalise content, tailor your experience and to keep you logged in if you register.
By continuing to use this site, you are consenting to our use of cookies.
