Hi Sir

There is litle doubt in my mind

While designing any basic cell if i refer to allen holberg where he has taken the parametres of 0.5um
technology and we are working on 90nm parametrs that to in cadence software where each mosfet is defined in .scs file in peice wise linear fashion with different lengths and uncox which is not there in case of pspice simulator. My basic question is that should we take W/L calculted from holberg to start with intial W/L of devices and than move in cadence at 90nm and converge the targets we need. Is it the right way??? if not then how to find a find unCox value and Vth value in cadence software in which
every mosfet has different threshold and beta for different length.