lhsj81
Newbie level 6
aulvs
Hi guys,
I am currently using Assura320 with EXT712. I have few modules that passed DRC and LVS. I ran RCX from the Assura (which is set to call EXT) and successfully extracted the parasitic components. However as I was running simulations I realized that the netlist generated from the ADE has wrong source/drain diffusion area. Also some of the transistors source and drain connections have been switched.
This lead me to explore the av_extracted view (which consists of auLvs views). And found out that all the extracted transistors had correct width and length, however all of them had the same source/drain diffusion area equivalent to that of a transistor with W/L of 10um/0.35um which is the default pcell startup parameters for the PDK that I am using.
I can manually edit the width of the transistor to a different value and change back to the original to correct the diffusion area however, this method is too tedious for designs with lots of transistors, and also once the av_extracted view is altered, the ADE seems to prevent the user from using the altered av_extracted to generate the netlist to be used for the simulation. Is there something that I should be doing during the LVS process? or during the RCX process? in order to get the source/drain diffusion area correct? Or is this a bug from the PDK?
Thanks for your help,
Hi guys,
I am currently using Assura320 with EXT712. I have few modules that passed DRC and LVS. I ran RCX from the Assura (which is set to call EXT) and successfully extracted the parasitic components. However as I was running simulations I realized that the netlist generated from the ADE has wrong source/drain diffusion area. Also some of the transistors source and drain connections have been switched.
This lead me to explore the av_extracted view (which consists of auLvs views). And found out that all the extracted transistors had correct width and length, however all of them had the same source/drain diffusion area equivalent to that of a transistor with W/L of 10um/0.35um which is the default pcell startup parameters for the PDK that I am using.
I can manually edit the width of the transistor to a different value and change back to the original to correct the diffusion area however, this method is too tedious for designs with lots of transistors, and also once the av_extracted view is altered, the ADE seems to prevent the user from using the altered av_extracted to generate the netlist to be used for the simulation. Is there something that I should be doing during the LVS process? or during the RCX process? in order to get the source/drain diffusion area correct? Or is this a bug from the PDK?
Thanks for your help,