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  1. #1
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    pmos leakage

    I heard "In PMOS the leakage is less compared to NMOS for the same ratings."

    Is it correct? if so, can anyone explain the reasons for that..

    Thanx..

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  2. #2
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    Re: Is PMOS leakage is less compared to NMOS for same rating

    Off-state leakage is equal for NMOS and PMOS in my technology.



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  3. #3
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    Re: Is PMOS leakage is less compared to NMOS for same rating

    it is mainly due to the mobility of the majority charge carrier involved....



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    Re: Is PMOS leakage is less compared to NMOS for same rating

    electron has higher mobility than holes.



  5. #5
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    Re: Is PMOS leakage is less compared to NMOS for same rating

    I know there is difference in mobility for electrons and holes. But How exactly it is? for same rating there should be variations in size for PMOS and NMOS. So the areas will be different and which may effect the leakage...

    I am not sure how for same rating the leakage currents will be . Can anyone explain details about area effect , mobility effect and any other effects???


    Thanx...



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  6. #6
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    Re: Is PMOS leakage is less compared to NMOS for same rating

    leakage is mainly due to transitions that are not supposed to occur... transitions due to energy due to temperature or collision rather than electric field....

    so as area increases the number of electrons undergoing such transitions increases.... number of electrons makes it increase for NMOS....



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