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I'm a bit confused by the original statement that you
"have a resistor that is defined as: R=0.2*f" because
that's not a resistor and I'm curious how you came to
have (implying physical possession) such a thing,
which I would not think exists.
I'm wondering whether it is in fact an inductor...
Certainly an avalanched back-diode will be a source
of instantaneous current once the FET turns on,
unlike the leisurely inductor current ramp you
probably have planned on for the motor load.
That means PWM is not producing a controlled
switch current in the MOSFET, but whatever the...
I have no reason to agree or disagree (though absolutes
tend to fail) but have seen multiple older accelerometer
designs go EOL as manufacturers drive their customers
to the newest, highest-feature designs; away from analog
outputs to serial, etc.
You might begin with ST's product life cycle...
Every device has a DC safe operating area and a duty cycle dependent SOA and a one-pulse (spec width) SOA. This is what you are violating by some combination of device, control and workpiece attributes. You can fix one of these by catalog shopping.
From the narrow duty cycles shown I wonder if this is a min on time / max on time problem that is "breaking the loop" (or just "winding it up").
The character of instability holds clues. A small signal instability ought to look like a sine wave oscillation, while "limit cycle" issues will look...
Purely from an economics point of view I'd say "no".
I get multiple spams a day for web and mobile app services, the local ads are full of same. Supply and demand seem out of balance and content creators get paid squat in that kind of environment.
If you will succeed it will be on the...
A long time ago in a galaxy far, far away I made a veriloga frequency-to-voltage model.
You could use that to control a voltage dependent resistor model.
Or you could combine the two all in a veriloga bundle.
The frequency sense was crude, just a zero crossing math, latest minus previous...
I don't see where these "agnt" instances are, or what they are.
The schematic shown is not the "GNTAna.scs" (subcircuit?)
from which the errors are thrown.
If they're "A sources" and those "parameters" looking for
"component name" arguments are actually such (like cccs
wants a device, not...
You should look at the next layer - what VT options are
there, can you do everything you need to with a (say)
BVdss=1.8V, VT=0.4-0.6V device? I'd suspect that things
like output drive and input-output delay would not be
very good or consistent when VT variability straddles
the nominal supply...
I think a fundamental problem will be small signal vs
large signal behavior. Large signal will expose the FET
nonlinearity as a loss / distortion component, more
clearly than AC small signal analysis, unless the
"forward" and "feedback" resistors are kept to
identical operating points (incl...
If this is a capacitive sealing type application, the
plastic film itself may be part of the problem -
flaws, pinholes etc. present a lower breakdown
and there's where an arc will start, and then the
IGBT sees more than designed current.
Now you might ask, where is the protection against
There is an error term in the transient ramp offset
voltage measurement scheme. It involves the ramp
dV/dt and the low-overdrive propagation delay
(which itself depends on input dV/dt, the slower
you go, the lower the overdrive and the longer
the delay). Your "measured" Vio will include ramp...
"The" circuit? What circuit?
You're not going to, for example, "improve" the high voltage
switching performance of anything, by going to 5nm (from
where?). You might improve speed and transistors per mm2.
You might or might not improve power depending on the
balance of trade-offs made for you...
The drain voltage would depend on the load, the
load is the input bias current of the amplifier.
Seems peculiar, to drive the PMOS with a not-ground
voltage for turnon if this is supposed to be a "STFU"
switch. But we'd want a datasheet link for the amplifier
if we were to make sense of a...
On the other hand many major mfrs have started
to "disappear" obsoleted products' collateral from
their web sites. I like to collect old-timey databooks
fro as early as possible as the manufacturers were a
lot more forthcoming with design and physical
details, back when engineers ran the...
With ion implantation you have control over the
initial depth of the dose; for deposited dopant
you can only have Z=0 initially. With ion implant
you can have Zpk=-0.1 or -1u depending on
accelerating voltage and ion charge (triply ionized
boron picks up 3X the energy from the accelerating...
It might be less about current than its "chopping". The motor -drive- might be what needs a separation of signal / data supply and ground from electromechanical. Have you put a 'scope to the supply to see how filthy?
Often this is due to a built-in calculation in a "callback" that figures a model property based on instance (symbol) properties. If any of them are not-set or fail to evaluate due to insane values (like a "/0" from a defaulted empty field) then NaN is what you get.
So I'd look real carefully...