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If leakage is not an issue, should be B, B's leakage is smaller.
If power is an issue, should be A, A's active is smaller.
However I can't make sure the consideration of SOC design in cellphone processor chip.
Here has 2 memory device A and B:
The active current of A is 10 mA, B is 20 mA;
and leakage current of A is 20 uA, B is 10 uA.
For a hand on SOC design, like cellphone processor chip, which memory device is better choice? A or B?
Please help me.
I have searched the sense amplifier related information of SOC embedded memory.
Could anyone told me the power of sense amplifier is what percentage of SOC embedded memory read power?
Thanks a lot.
I find out the data following:
180nm process : the capacitance of M1 : 0.2fF/um.
32nm process : the capacitance of M1 : 0.2fF/um.
But the metal 1 line area of 32nm process should smaller much than 180nm process.
Why their capacitance is almost the same...
On metal line has 700um long, 0.25um width,
for 0.2fF/1um, the capacitance of the metal line is 0.2*700=140fF.
If the metal line need run up to 1GHz.
The peak current is V/R, R=t/5C=1ns/5*140fF=1.4k.
But the metal width is 0.25um=> only can run 250uA.