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  1. Replies
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    Closed: FAN OUT /FAN IN for Logic Families

    I have noticed in all the books as an introduction, it is written that the Fan out is one of the performance measurement parameter for the Logic families.
    Why do not we look at the Fan in ?

    Thank...
  2. Closed: Re: BJT switching times ( fall time and rise time approximations )

    Is it because during Rise time, the BJT is not in true active region ? Because base current is negative.
  3. Closed: BJT switching times ( fall time and rise time approximations )

    Can someone please help me understand the approximations that are made in this attached handout.
    In calculation of rise time the Q is assumed to be off but in reality it is in active region ?...
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    Closed: Re: Donors , Acceptors and Traps

    To add it my question, it’s Si doped with Boron. So question is can electrons from acceptor level jump to CB ?
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    Closed: Donors , Acceptors and Traps

    How the impurities are different from traps ?

    Also in acceptor impurity, can the electrons from the ionized boron acceptor level jump to Conduction Band at 300 K?
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    [SOLVED]Closed: Re: Energy Band Model and Energy bond Model

    2.The splitting of the energy levels are due to "exchange integral" or resonance process which is due to the fact that electrons are indistinguishable.

    According to Paulis exclusion principle, the...
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    Closed: Re: PN junction in thermal equilibrium

    I think I probably was not clear about my question. Now I have attached a figure with this message. Can you please look at the figure and please tell me what am I missing 155375?
    What you said is...
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    Closed: Re: PN junction in thermal equilibrium

    But my question is : The built in E field in the Depletion region favors the flow of minority carriers. The thing that is bothering me is - See you have uncovered positive ions on n side. this net...
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    Closed: PN junction in thermal equilibrium

    With zero bias, due to concentration gradient, the diffusion of majority carriers happen. Because of this we have built in E which favors the flow of minority carriers... on the n side we have...
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    [SOLVED]Closed: Energy Band Model and Energy bond Model

    1. Does Bond model really specifies the exact position of the defects, or missing atom in a ( for example Si crystal ) ?

    2. In the formation of energy bands, does the energy states overlap just...
  11. Closed: Re: Metal Oxide Semiconductor in strong Inversion

    I understand partially what you are saying but still unclear about the fast response of carriers in bulk with respect to high frequency? Lets consider an ideal situation then how will you explain...
  12. Closed: Re: Diffusion Capacitance in PN junction and forward bias diode resistance

    Yes, most of the resistance for a forward biased diode is present in the junction (which is void of majority carriers formed by recombination of two different types of majority carriers).------ I do...
  13. Closed: Re: Metal Oxide Semiconductor in strong Inversion

    Is it related to mobility ? I can not figure out why the electrons at the interface can not respond to fast changing signal at the input but carriers in the bulk can which changes the depletion...
  14. Closed: Re: Diffusion Capacitance in PN junction and forward bias diode resistance

    I understand the concept for the resistance but I will rephrase my question for the Diffusion Capacitance. So Diffusion Capacitance comes into play in the forward bias because of the minority...
  15. Closed: Re: Metal Oxide Semiconductor in strong Inversion

    Please correct me if I am wrong. I also attached a figure with the first message. I have a hard time in understanding - why would the carrier at the interface won't have enough time to change with...
  16. Closed: Re: Metal Oxide Semiconductor in strong Inversion

    Query 1 is solved. I follow that.

    For 2), 3), 4), the concept that I don't understand is that how come the electrons at the interface can not respond to the high frequency signals instead the...
  17. [SOLVED]Closed: Re: Is Fermi level in Metals- constant ? and how do Quasi Fermi levels in PN junctio

    [QUOTE=c_mitra;1659659]1st query: right. Levels deep down will have no effect on the electrical conduction.

    4th query: All solids have abundance of electrons but for most, they are not available...
  18. Closed: Metal Oxide Semiconductor in strong Inversion

    MOS (p type)
    1) General Question: Why thin charge sheet on the metal side ? Is it because positive bias on metal side will attract the electrons leaving immobile positive ions at the metal -oxide...
  19. [SOLVED]Closed: Re: Is Fermi level in Metals- constant ? and how do Quasi Fermi levels in PN junctio

    1st point :
    "In the metal, C.B and V.B. overlaps. Fermi Level is in the C.B., so you are talking about the states above the Fermi level which are empty at absolute zero. At non zero temperature,...
  20. Closed: Diffusion Capacitance in PN junction and forward bias diode resistance

    What is the concept behind Diffusion Capacitance and on resistance of the diode ? Can we consider Diffusion Capacitance as a parallel plate capacitor ? It is easier to see the Depletion Capacitance...
  21. [SOLVED]Closed: Is Fermi level in Metals- constant ? and how do Quasi Fermi levels in PN junctions ?

    Hello,

    a) Does the Fermi level of the metal changes when applying a voltage across Metal Oxide Semiconductor Capacitor ?

    b) Why does the Quasi Fermi level moves up with decrease in potential...
  22. Closed: Re: Potential Energy and Kinetic Energy of an Electron in an Energy Band diagram

    I am asking this question in context of Energy band diagram. Topic is Band bending.
    P.E.=-q * Electrostatic potential ...
    In this topic, ( From Robert Pierret Book), it is said ,' If electron is...
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    Closed: Metal Semiconductor Contact

    Assume n type semiconductor:
    1) Can the fermi level of metal change when it makes contact with the Semiconductor ? What assumptions do we make in ideal situation ?
    2) Is the Schottky Barrier in...
  24. Closed: Re: Potential Energy and Kinetic Energy of an Electron in an Energy Band diagram

    Can you please Elaborate on this ? "the lower limit of the conduction band Ec (as you called it) is like one of these atomic
    energy levels - potential energy" I still am having difficulty in...
  25. Closed: Potential Energy and Kinetic Energy of an Electron in an Energy Band diagram

    Hi,

    Can anyone explain the concept of K.E. and P.E. in a semiconductor?
    Why Ec (lower level of Conduction Band) is considered as P.E. ? and why the Difference between the higher energy state and...
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