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Type: Posts; User: dick_freebird

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  1. Closed: Re: How is the maximum inductor value in a technology process is determined

    One limit is the series resistance of the spiral, and
    somebody in the foundry design group might pick
    a number from an unspecified orifice and declare
    it a limit.

    If you need Q then you're...
  2. Closed: Re: Unable to plot the waveform while simulation in cadance specctre?

    You can declare a "marching waveform" which will update
    as you go.

    It's been a while but I don't recall needing the simulation
    to finish before plotting; getting partial plots is eomthing
    I...
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    Closed: Re: LDO Simulation Output Results

    Positive feedback when you wanted negative?

    Looks like you are only passing the dV/dt from supply
    to output and only when FETs are weak. Maybe you
    have something disconnected.

    You know what...
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    Closed: Re: Decoupling CAP using MOSFET?

    I have never encountered a technology where a
    capacitor-purpose dielectric is made thinner than the
    lowest voltage MOSFET gate. I'd be interested to see
    any examples otherwise.
  5. Closed: Re: Noise effects in a power source in ADS

    I'd tend to doubt that white noise is your biggest
    power supply "aggressor". A thing to characterize,
    sure, why not.

    But if you're after an estimate of in-application
    spectral purity, I...
  6. Closed: Re: How to measure differential signals using an Oscilloscope

    I like to use the "signal of interest" (or one side of the pair)
    for this because the CAL signal on most 'scopes is way lower
    frequency / edge rate than most of what I look at.

    You would of...
  7. Closed: Re: New fabrication of an old nmos processor from the 80s in a new semicond. technolo

    Back in the late '80s / early '90s I knew a guy out of TRW
    Redondo Beach who told me about InP digital chips they were
    doing, with 200GHz main clock.

    While detailed design databases are...
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    Closed: Re: LTSpice Noise Analyis

    I haven't really experienced anything I'd call "standard
    model design practices" in a pretty long IC design career.
    IME it's always a negotiation and you can't count on the
    noise params being...
  9. Closed: Re: Passing radiated EMC with an SMPS involves an element of luck...how much agree?

    Many of the "sprinkles" you mention look more like
    conducted emissions stuff. Of course power lead
    can do both.

    Why you'd expect a calculation to do anything for
    radiated emissions after the...
  10. Closed: Re: calibre LVS missing inductor (bad device detected)

    Look to your extract rules, the part that "should" recognize
    inductors. It probably wants some specific not-normal
    features tp do its job, because there's no real difference
    between an inductor...
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    Closed: Re: Decoupling CAP using MOSFET?

    "Issue", not really, provided that the supply "is what you
    think it is". Yes, there's gate ox defect density as a long
    term reliability detractor, but it's the same as what you've
    got going on...
  12. Closed: Re: Using VCVS as delay elements result in period signal rising and falling time chan

    I've never used the Cadence analogLib vcvs in this way.
    Are there perhaps other non-displayed params that set
    tr/tf (or slew rate)?
  13. [SOLVED]Closed: Re: voltage and current waveforms spark gap

    You might look at publications from the "gaseous electronics"
    conferences, the folks doing very high voltage power switches
    using gas tubes. I'd bet somebody in that crowd has looked
    at SPICE...
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    Closed: Re: Mosfet Driver Vs BJT Driver

    For simple circuits maybe this kind of thing suffices. Maybe
    even costs less although by the time you add in passives
    and board area, did you really win vs an IC MOSFET driver?
    Not likely on...
  15. Closed: Re: Cut-off current through an N-channel power MOSFET with negatively charged gate

    Sure, if you were clear, but you were not. Just what is
    "cutoff current" supposed to mean to the average person
    schooled in the art? Drain current, unless you say otherwise.
    You didn't until...
  16. Closed: Re: Cut-off current through an N-channel power MOSFET with negatively charged gate

    How low it "can" be is immaterial, how high it might be is
    more relevant to circuit design if you're not hand-picking
    parts for that quality.

    GIDL (gate induced drain leakage) is a thing in...
  17. Closed: Re: Whats the best way to ESD damage a PCB

    Just what are you looking to achieve by all of this random
    abuse? A random failure signature?

    Looking for in-production ESD damage or post-consumer-
    sale ESD damage?

    Certain that ESD is your...
  18. Closed: Re: Sine PWM calculated with pic, instead of using table

    I don't think you can "compensate" a cycle-by-cycle slip,
    you're going to roll through the beat cycle.

    You could look at the amount of sine wave distortion you
    can stand; overkill on the pulse...
  19. Closed: Re: Sine PWM calculated with pic, instead of using table

    Question is, do you have enough CPU / MCU cycles per PWM
    period to perform this calculation?

    Calculating it once and storing a table is more CPU-efficient,
    less memory-efficient. Which do you...
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    Closed: Re: Frequency divider ICs for RF

    CMOS prescalers I have seen, work -better- with square waves
    (in terms of things like phase noise) but are made to work well
    enough with sine wave input.

    I think 200MHz is kinda low to interest...
  21. Closed: Re: How do I check the breakdown voltage of a MOSFET in Hspice (Hspice_L-2016.06-SP2)

    It would be surprising if GloFo didn't already have these as warnings, but that's for Spectre and I don't know what HSpice has. Have seen other simulators with similar SOA checking features. Have you...
  22. Closed: Re: How to use the same RELAY on 12V & 24V vehicles

    First, I question that you "need to use the same device on
    both 12V cars and 24V trucks". Want to, maybe. Good
    idea if practical, sure. But manufacturers have model
    numbers because one size...
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    Closed: Re: HBM Model Simulation ESD - TINA TI

    Switch implementation is something that varies widely (if
    it's even supported at all) in simulator dialects and symbol
    libraries. You need to get tight with the specific simulator's
    documentation....
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    Closed: Re: Temperature effect on diode function

    While thermally-generated carriers may increase, thermal
    effects such as scattering drive mobility reduction for a
    net increase in bulk resistivity as temperature increases.
    Lifetime effects...
  25. Closed: Re: Analog Layout- Why CD KEY is Required ?

    "CD" stands for "Critical Dimensions" and the CD "key" has
    all of the features that should be dimensionally controlled.
    It's not for your benefit, it's part of the "foundry dues" just
    like mask...
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