Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

electonics, why we are using h-parameter

Status
Not open for further replies.
Re: electonics

There are devices such as transistors which are current driven voltage devices. For example in a transistor in CE mode the input signal is the base current and the output signal is the collector current or the collector to emitter voltage. The basic difference that a transistor has from a resistor or a capacitor is that it is not fully bilateral. What I mean to say is that the device cannot be applied with the reverse way for the same application. Also the devices have internal feedback so that the output changes the input. Now for transostor the output is voltage which changes the input current and also the input changes the output. The nature of the input and the output are such that it is required to define parameters so as to be able to define the effect of the input on the output and vice versa. So h paameters are most suitable for transistors. But for FET devices you will hardly see any h parameter analysis.
 

Status
Not open for further replies.

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top