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what is the difference "spiral_std_mu_z" and "spiral_sym_ct_mu_z"

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CM.Lee

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Hi, I'm using tsmc 65nm process and designing LO buffer

Target frequency is 5.8GHz

What is the difference spiral_std_mu_z and spiral_sym_mu_z?

and in my case, what is the acceptable choice?
 

Re: what is the difference "spiral_std_mu_z" and "spiral_sym_ct_mu_z"

If you look at the layout of these inductors you will notice the differences. sym inductors have a continuous metal layer (m9) for their spiral structure. std on other hand have discontinuities. It make different amount of revolutions on different turns. I guess by doing that, the inductance value achieved is more. Hence smaller std inductors can achieve same inductance value like bigger sym inductors.
 

Re: what is the difference "spiral_std_mu_z" and "spiral_sym_ct_mu_z"

spiral_std_mu_z are the normal inductors in the ultra thick metal layer of the process whereas spiral_sym_ct_mu_z are the center tapped inductors which are symmetric about the center tap, which is also in the ultra thick metal of the process.

If you are doing a single ended LO buffer design, you have to go for spiral_std_mu_z. If you are doing differential design, then you can use either one.
 
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