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S-parameter black box model for ADS simulation

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Lathas

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Can we use s-parameter black box model for HEMT device for all frequency and bias conditions for ADS microwave circuit simulation? Will it work in the nonlinear region too?
 

S-parameters are by definition linear small-signal parameters.
You will need different S-parameter sets for different bias conditions, and they will be valid for small signal only, at that given bias point.
 

S-parameters can be used in the linear regime and X-parameters in ADS used for the non-linear regime.
 

S parameter is got with fixed DC bias.If you want to simulate the DC,you have to get the nolinear model.
 

S-parameters can be used in the linear regime and X-parameters in ADS used for the non-linear regime.

Does it mean I have to use x-parameters to do device modeling for non-linear regime?
 

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    Lathas

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