CMOS RFIC or GaN technology the best choice of today

CMOS RFIC or GaN technology the best choice of today for mm-wave application?

CMOS process is cheap,less reliable,universal process,low voltage
GaN process is expensive,high reliable,robust,foundry dependent
Both are possible,all depends on the application..

At mm-wave you have few plain-CMOS options and
the ones you do have, are very low voltage. Stacking
costs you geometrically in area and adds losses. A
SiGe device would help.

GaN and GaAs suffer from not having the ability to
do logic or power management, well. If your "application"
wants to be single-chip-does-all, and "all" is any kind
of complex, CMOS rules for the ability to integrate
"stuff" at low power and high density.

If you care only about the radio and it's a simple one,
GaN will have the easiest time at the highest frequency.
But radios today tend not to be simple or single-spec.
GaN devices evidently need some help with linearity
despite having nice fT/fmax. Your linearization scheme
sure would like some CMOS digital learning capability
I'd bet.

Now I've spent 20-plus years in high reliability CMOS
product development, and I have no idea where this
stuff about CMOS being unreliable but too-new-to-
have-datasheets (let alone time in the field) GaN
being high reliability, comes from. I could speculate
a particular orifice.

Lathas said:

CMOS RFIC or GaN technology the best choice of today for mm-wave application?

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CMOS is old faithful for IC design. GaN is one of the latest technology for
Very High Power mm-Wave applications, it is beating out LVDMOS.

But isn't there so many unresolved issues with GaN? Also, is there any commercially available GaN devices in mm-wave range?