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Consider an NMOS transistor fabricated in a 0.18um process with L= 0.18um and W = 2um. The proces technology is specified to have Cox = 8.6fF/um^2, un = 450cm^2/v*s, and Vth = 0.5v.
a. Find VGS and VDS that Result in the MOSFET operating at the edge of saturation with Id = 100uA.
b. if VGS is...
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