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Apply zero voltage to source and bulk, maximum Vgs to the gate, and small Vds (50 mV or 100 mV) to the drain.
Divide Vds by Ids - you will get Rdson.
Rdson is inversely proportional to W (gate width).
In scaled technologies, you have:
1. More masks
2. smaller geometries --> more capable (and more expensive) manufacturing tools
3. More metal layers
4. More chips on one wafer or - same number of chips, but more devices and functionalities per chip
5. More R&D cost (NRE).
6. Higher performance...
Other than WPE (Well Proximity Effect - making Vt of MOSFETs dependent on their distance to the edge of the well), there are tons of other layout-dependent effects, described by many dozens of SPICE instance parameters - are you interested in checking and comparing all of them, or only WPE...
The main physical mechanism why IR drop affects timing is driver "strength", or resistance - it depends on gate overdrive Vgs=Vg-Vs, and Vs is IR drop, whether it's static or dynamic.
There are many effects and different time scales involved in dynamic IR drop - response time (i.e. series...
In addition to all good advices above - I would suggest to check or to do the following:
1. Use different ground / power nets for digital and for analog portions of your design (if possible).
2. If (1) is impossible - try to connect digital and analog portions of ground and power nets right at...
The "terminals" of mutual inductance elements, K, are not nodes of the RC network, but bodies of resistors (each resistor is also a self-inductor L).
This is a fundamental problem, and I don't think that regular calview.cellmap approach will be able to handle it.
But you better ask your...
In the past, Vt of MOSFET was increasing (by absolute value) for decreased gate width.
In later technologies, it goes in the opposite direction, that's why it's called inverse narrow channel effect.
It's not clear how deep into device physics you want to go, to view it as an acceptable answer.
There are a couple of books on layout, but they are quite old.
The basic principles are still the same (shielding, symmetry, common centroid, matching, decoupling, low resistance, void hot spots for current density, etc.), but technologies and layout styles, design rules, restrictions in latest...
Both types of devices - floating body, and body tied - are used in PDSOI technologies.
When floating body is not at source voltage, due to a finite charge, it’s equivalent to the effect of body voltage on a mosfet, I.e. will lead to higher current at zero gate voltage, I.e. to higher...
- Lower the temperature
- Increase Vgs
- Use forward body bias
- Apply mechanical stress
The main / easiest parameter to decrease Rdson is the gate width, this is what power FET and PMIC IC designers use to make very low Rdson devices.
So saying "of course without changing the geometry" does...
All the comments about old computers, limited memory, shared resources, etc. are valid, and this should be the first things to check.
That being said - if you have a really big design, Virtuoso would not be able to handle it irrespective of where you run it on, on what system.
But such big...
NP is an implant layer, that is implanted into active silicon, also known as OD (OD, moat, active, diffusion - are all different names for the same thing).
OD is not blocking a connection to M1, it facilitates, enables electrical connectivity from the FEOL to the BEOL.
Connection between OD and...
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