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Hi mvaseem,
After extensive search, I could find that HSPICE has very good support for SOI MOSFET simulations using BSIM models from Berkeley. Therefore, I am planning to migrate to HSPICE for my work. By the way, PSPICE is surely an excellent simulator.
Soumendu
Thank you mvaseem,
I modified the expressions in the circuit and finally, I could get converged results. It was great to take your guidance and I appreciate your expertise in this area.
Soumendu
Thank you very much. I could implement the code correctly. But, I need to put Nnit value as 2.0e18 to be specific. As you mentioned in your post, Nnit>2e15 gives an error of "overflow in device X1.EP3".
Kn=1e-10 and Nnit=2e14 gives some output.
Kn=1e-03 and Nnit=2e18 gives some output.
Kn=1e-10...
Hi Mvaseem,
Are you sure about it? I have seen yesterday a cadence pspice online reference manual where it is mentioned that SOI models have been developed (model types: nmosoi, pmosoi) for PSPICE but I dont have these models with me. Check the link **broken link removed** , page 381.
If...
Hi Mvaseem,
Its not working as its giving the error "end of expression not seen".
I have attached the complete code for reference. The expression for V(2,10) is not taking into account the second line
+{(q/Ceq)*(Nnit*(exp(-1*V(2,10)*ET))/(exp(-1*V(2,10)*ET)+(Kn/Ka)*exp(V(23))))}, as evident...
Hi,
It didnt work Feri. If I remove the braces, when I use *(multiplication) sign, the characters after that assume a form of comment, rendered useless. What can I do then?
Hi,
Can you provide me the .lib and .olb file of this SOI MOSFET model? I want to simulate the Id/Vg characteristics of PDSOI MOSFET as well as FDSOI MOSFET. Do I need different models for them. If yes, I would request you to kindly share them with us. I am am currently working on NMOS/PMOS at...
Hello,
I am trying to create a subcircuit in PSPICE and I need to include following (dependent)voltage expression between two nodes 2 and 10 inside the subcircuit
E 2 10...
I could not understand how immobile charge uncovered increases current in the channel. Can someone explain this how current is assisted by immobile ions? Does it help in increasing the minority carriers which are mobile because ultimately the current is established by minority carriers?
Probably its because of too refined meshing. Try to use bigger elements and apply lesser load to begin with. Another way can be that you can begin with simple structure and keep adding your complexity step by step. This is a lengthy process but it may clarify the step which is creating the...
Hi,
I am designing RF switch in coventor but stuck in the step for mem mech analysis. mem electro passed smoothly. I am getting the error of standard_memory of 500mb is too less for this simulation. minimum reqd memory is 1439mb. So how can I correct this? I have 4gb memory in my desktop-pc...
well you have taken the right direction. I am also working in this area but havnt found appropriate literature. If you have found some, can you please quote the source?
I will try to share relevant information as and when I get them.
thanks
soumendu
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