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Recent content by skyhorse

  1. S

    need suggestion on circuit model for HBT on SOI

    I have very interesting HBT devices fabricated on thin SOI. The most interesting part is that by increasing substrate bias voltage, Rc decreases, breakdown voltage decreases, ft/fmax increases. Now I am trying to build a circuit model for this device, unfortunately I am new to modeling. My...
  2. S

    Current efficient, low voltage, low drop out regulators

    Before you download the whole thesis, I suggest you download this small file to see the detailed content about this Thesis...thus you won't wast your points when you download the whole thesis. regards Shorse Deleted. /pisoiu
  3. S

    Current efficient, low voltage, low drop out regulators

    low drop out thesis PhD Thesis Title: Current efficient, low voltage, low drop out regulators Author: Gabriel Alfonso Rincon-mora, also the author of the much-refered book "Voltage Reference". Chpt 1: Introduction chpt 2: System design consideration chpt 3: Regulator topologies chpt 4...
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    beginner's question: starting point for high T design

    Thanks for your reply. It is a 0.18 um technology, and I am working for college and I guess I won't worry too much about the error. It is a bulk technology, and I don't know the best way to attack the leakage at high T. Yes, I did a lot of high T measurement (DC +AC) on transistors, and I need...
  5. S

    beginner's question: starting point for high T design

    I am working with a deep submicron BiCMOS technology. I did some high T measurement on BJT, and the collector-substrate leakage is 75 nA at 200 C and 1.7 uA at 300 C. One of my workmates has already submitted a bandgap reference ckt using Brokaw cell. My cadence simulation shows that the output...

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