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which one got better future?
It seems to me that standard cell design engineer does not have much room for promotion, since standard cell characterization may have a standard process?
I am fresh graduate and does not know much about those jobs. Pls advice. Thanks in advance.
what are the typical capacitance for output pad, off chip connection wire and input of the oscilloscope?
I am quite new to IC fabrication and unsure about how many times larger I should size the output buffer, compared to the minimum sized transistor.
BTW, I am using STM65nm
Since memory cells are arranged in a very regular structure, is there a special way to place&route the memory cells? or it is the same way as standard cells
how to include bitline metal layer capacitance in memory design using nanosim?
It seems the total bitline cap is very small in my design, about 100fF for a bitline with 1024 memory cells connected in 130nm. I am wondering if the metal layer cap is included.
Thanks for any suggestion.
In the LS(lithographical symmetrical) sram cell layout, vdd/vss has to be shared by the cells in the adjacent rows. I've read some papers talking about sram where the vdd is controlled row by row. I just wonder how the layout is done.
Thanks for any suggestion;-)
Anybody knows how to measure current of X1 as follows, it seems nanosim can only measure elements starting with M, C...and so on
.SUBCKT INV1X1 A Q
**INV Part
X1 Q A VDD! VDD! PFET L=120E-9 W=560E-9
X2 Q A GND! GND! NFET L=120E-9 W=160E-9
.ends
Just find that in my design the total average power is less than half the summation of individual average block power, how can that happen?
all suggestions are welcom :?
I am going to charaterize the Vth using the following equation:
sqrt(2*I) = (Vgs-Vth)*sqrt(K*W/L).....
and I set up the variable sqrt(2*I) in the ADE. while the following error occured:
*Error* Evaluating expression (sqrt((2 * IDC("/M0/D")))).
*Error* ("times" 2 t nil ("*Error* times...
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