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In Physics section of sdevice, the default charge concentration is given in C/cm3 e.g: (3.8e-16 C/cm3). But if my device is in nanometer scale, what will be the final charge concentration? Does TCAD automatically converts it to nm3 and it will be 3.8e-16 C/nm3? If I want to use 3.8e-16C/nm3 ...
Thank you for your answer. In that case, if I apply the charge at the oxide/silicon interface in the simulation environment, will it be the same as attaching the charge at the gate surface in real-time?
Hello, I am trying to model intricsic semiconductor for ISFET that can mimic the properties of electrolyte medium. I saw various literature on pH sensing ISFET doing this. But I need help with the coding.
Hello, I am trying to simulate a small charged particle attached to the gate surface of a FET and see the effect of the charge. I want to define how much charge (i.e: 1.6e-19 C) I will give to that small region attached to the gate. I have tried using the fixed charge mentioned in the manual...
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