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I am talking about true Bipolar transistor logic - high power TTL series, low power Schottky TTL. Are these currently being used in any analog or digital applications ?
I took a course this semester that covered BJT (TTL, ECL), NMOS, and CMOS technologies. As I understood that CMOS technology is widely used because of its low static power dissipation.
Now the question is :
1) Do we still use BJT and NMOS technologies? If yes then where? What are the...
I am reading couple of books on calculating the values of VIL, VOL, VOH, VIH for basic NMOS inverter. I notice there are 2 methods to calculate these values.
One is an approximate method: where it is assumed that VOL is basically equal to Vmin that a given circuit can achieve and set VOH to...
Resistance in quasineutral region is much lower than the depletion region resistance at low applied voltages, that's why voltage drop on it, IR, is much smaller than a voltage drop on depletion region.
I followed everything but why resistance in Quasi neutral regions under low level injection...
when we apply forward voltage across the PN junction, all of the voltage appears across the junction. why ?
I am reading Robert Pierret book and it says that as long as we have a low level injection case i.e. when Vapplied is less than Vbuilt in, this is a case of low level injection -how ? and...
I have noticed in all the books as an introduction, it is written that the Fan out is one of the performance measurement parameter for the Logic families.
Why do not we look at the Fan in ?
Thank you
Can someone please help me understand the approximations that are made in this attached handout.
In calculation of rise time the Q is assumed to be off but in reality it is in active region ?
Second, in calculation of fall time , Q is assumed to be a constant current source but in reality the...
How the impurities are different from traps ?
Also in acceptor impurity, can the electrons from the ionized boron acceptor level jump to Conduction Band at 300 K?
2.The splitting of the energy levels are due to "exchange integral" or resonance process which is due to the fact that electrons are indistinguishable.
According to Paulis exclusion principle, the electrons are distinguishable. Right ? I do not follow that.
Also, Si bonds with other atoms via...
I think I probably was not clear about my question. Now I have attached a figure with this message. Can you please look at the figure and please tell me what am I missing ?
What you said is absolutely right but this one thing is bothering me and I am sure it is related basics of...
But my question is : The built in E field in the Depletion region favors the flow of minority carriers. The thing that is bothering me is - See you have uncovered positive ions on n side. this net positive charge and holes in N region should have repulsive forces.. How come then the holes in...
With zero bias, due to concentration gradient, the diffusion of majority carriers happen. Because of this we have built in E which favors the flow of minority carriers... on the n side we have uncovered positive ions and these ions oppose the motion of holes from p side but helps the thermally...
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