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here nmos Vd = Vgs + Vdiode & we are getting this 'vd' for less ckt bias current 'id'
this can be done by increase length of nmos, but may be you are gaining some area due to square law dependency of Vgs with id in saturation
Thanks Leo, But i want to understand which effect results in Bulk-source(or drain) breakdown, Like gate-source(or drain) breakdown occurs due to hotelectron effect, gate leakage etc.
Bulk-Source/Drain Breakdown can only occur due to avalanche effect of reverse bias junction, but it will happen...
Hi All
when we use core low voltage MOS(1v Device) working at higher voltage supply(1.8V) then i need to bias MOS such that voltage difference between Drain , Source & Gate are in safe limit(1v),
Do i also need 2 care for Bulk to Source(or Drain) voltage protection ?
As Bulk to Source(or...
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