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---------- Post added at 12:26 ---------- Previous post was at 12:26 ----------
Thanks for reply.
But when I draw graphs of two equations(triode region and saturation region), they don't have a intersection point (that is expected to be made at Vds=Vgs-Vt)...
Most textbooks describe MOSFET I-V characteristic equation with channel length modulation effect as
Id(sat)=K(W/L)(Vgs-Vth)²(1+λVds).
But because the effect of pinch-off(or channel length modulation) begins when Vds>Vsat(Vgs-Vth), I think that it should be...
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