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Re: noise figure
The NF and gain are all recieved under a certain input & output impedance. If you change its impedance without modifying your circuit, the gain and NF will be deteriorated greatly.
You may regard a common MOSFET as a varactor, connect the MOSFET drain, source and bulk together(for example, as B), then this two ports(the gate and B) device is a varactor. Simulate it with S-parameter, you can get its C-V and Q-V characteristics.
ADS example "MOS_VCO_prj" has a design...
Maybe you could try ADS. You can do "envelop" analysis in ADS, by which you will get the time domain and frequency domain perfomance quickly and synchronously.
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