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Recent content by leelamadhav

  1. L

    Analog and Digital design

    Analog is a better option
  2. L

    Explanation of the NBTI process

    NBTI It is the generation of interface traps when stressed at negative voltages... it is believed to be due to the reaction between cold holes and the Si-H bond at the interface...it is more in pmos devices
  3. L

    An interesting 2 stage op-amp question!

    U can refer to an example in allen hollberg.. the RHP zero is 1.2 times ther UBW because we need a phase margin of 60deg...
  4. L

    What's the physical meaning of Vdsat in Spectre?

    vds vdsat I think Vdsat is the voltage at which the carriers travel with saturated velocty not VGT...
  5. L

    Doubt in Razavi's book

    Any one plz tell me why the voltage jumps to infinity..
  6. L

    Current reference using MOS transistors and using VDD and a resistor

    Re: Current Reference Also the drop across the resistor is more limiting swings
  7. L

    Who can I help me about filter design?

    I think u can go through EECs 247 course frm the berkeley's webcast site
  8. L

    Why is there no chapter about OTA in Razavi and Grey & Meyer?

    Re: OTA Even i am a bit confused.. so the telescopic/cascode opamp (and other opamps) discussed in razavi's book are OTAs... Please correct me...
  9. L

    Doubt in Razavi's book

    Hi, I have a doubt in razavi's book. It is in Switched capacitor chapter pg 425. Here he says if switch s1 is open then the voltage at Vp and Vx goes to infinity if the capacitance from node vx to gnd is zero. Also he says if cx is the capacitance frm Vx to Gnd then both Ch and Cx will carry...
  10. L

    Best way to learn ADC and DACs

    Thanks a lot for the suggestions.. can any one give me the link to the ebook of Data convertors by Razavi
  11. L

    Why gate contact can not stack on poly above active area?

    I am not able to understand how does STI and dual gate tech help in this regard,,, If we put a contact on poly on the active area... the possibility of contact etching penetrating the poly still remains...
  12. L

    Increase length and Vth decrease

    What is Reverse Short channel effect,,, could you please explain.. i want to know more... how does Vt increase in length decrease ??
  13. L

    Increase length and Vth decrease

    In MOS Length Increased Vth decrease ????.. Think it is as the length decreases as the S/D come closer... There would DIBL effect... and also due to charge sharing.. The Vt decreases...

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