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body effect
The threshold voltage of a MOSFET is affected by the voltage which is applied to the back contact. The voltage difference between the source and the bulk, VBS changes the width of the depletion layer and therefore also the voltage across the oxide due to the change of the charge in...
As leakage is your concern I suppose you're using "thin-oxide" devices in a recent technology (130nm or less).. I would not recommend the use of those devices not only because of leakage but also to avoid any robustness and high volume yield issues cause by defects in the oxide or ESD zaps.. In...
The safest way is to lay it out and extract the parasitc R and C.. If the decoupling cap is large I would be concerned about the R you can get towards the supplies.. a bad (e.g. high ohmic connection) makes your decoupling worthless.. Impossible to give a rough estimation of the values, it's...
nmos bulk and source
Though question.. if the process allows it I would use the active well (e.g. well connected to any potential) everytime I need speed, as you minimize the Vth shift and you can eventually get rid of Cbs and Cbd (think about connecting the well to a common mode voltage)...
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