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Recent content by kvidhya

  1. K

    Analog layout matching techniques

    Advance Thank's . Hi every one 1.why matching is used in analog layout design? as i know to overcome areal and pheripharal errors to maintain voltage same in all the matched transistors 2.is poly resistance is high or metal resistance is high ? Regard's Harish
  2. K

    Well Proximity Effect

    Hi Every One Can any one explain well proximity effect changes in pmos and nmos what are the difference in them how current effect 1.I came to know that vth is increase if so current decrease is it right 2.device performance effect on oriantaion of source and drain. Thank You.
  3. K

    Minimization of Well-Proximity Effect

    Can any one help how to Minimization of Well-Proximity Effect as far as i know 1.by placing dummy's side in matching 2.**broken link removed**
  4. K

    [moved] Analog layout instantanious problem

    Thank's for u reply's the error which i got is due to connectivity i raised this question because this type of errors i did not came across generally connectivity problem gives an property error or net error but i faced problem with the block which i faced some instantanious errors but after...
  5. K

    [moved] Analog layout instantanious problem

    Good after noon i am facing a problem in analog layout i design one layout it is d.r.c and l.v.s cleared when i am calling that same design it is creating some errors i checked the file weather any file locks are present but no such locks can any one help in this problem
  6. K

    semi_conductor chip fabrication

    Hi in semi-conductor chips are cleaves from wafers while cleaving they normally cleave random directions or with help of planes like {100} or {110} or {111} etc ... Please help. Thank you.
  7. K

    110 nm layout technology

    ok what u said is right but error is showing due to bjt's to all n_wells where bjt's are not in different potential
  8. K

    [Moved] analog layout ( capacitor).

    thank u every one for responce the cells which i got from foundry error pron in that cells
  9. K

    [Moved] analog layout ( capacitor).

    In 110nm tech while running drc for capacitor i am getting this error how can i rectify this "in n_well , poly 1 overlap n+ diffusion is not allow".
  10. K

    110 nm layout technology

    in 110 nm while running layout drc it is giving as " N _ WELL WITH DIFFERENT POTENTIAL MUST BE SPRERATTED BY A DIFFERENT DNW_LV_MARK" I AM USING 6V P_cells IT IS GIVING AT ONLY GAURD RINGS HOW CAN I SOLVE THIS PROBLEM

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