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I wonder but during the dead time, how a current flows. I assume, that diodes will be in forward state and conduct current.
I am sure that Cge will effect on switch-off losses (increase). I didn´t see also implementaion of this technics.
IGBT Modules: Technologies, Driver and Applicaton. Infineon
I have looked on the famous book and have found very interesting thing.
It says that input gate-emitter capacitance can help to reduce switch-on losses.
I support your post. It is also true that for high voltage (600V) there is no yet MOSFET with high current capability.
Track drivers use just only IGBT modules. Also we have to think about reliability. IGBT has hight reliability and we could trust them.
I assume that someone does so to prevent overvoltage on the gate-source terminals during switching process.
Drain-gate capacitance creates positive feedback. As a consequence switching process leads to increasing of gate voltage.
Could you tell what your negative voltage on the gate terminal is...
For your MOSFET Td= 200ns is sufficient.
Look here https://www.jameco.com/Jameco/Products/ProdDS/1394427.pdf.
You should adjust Rd. Take Rd = 100 Om and see the difference between OUTA and OUTB
I have checked simulation model.
I can state that induction is not the reason of unstability.
I have simplifed my load and what I have got you can see on the following pictures.
Results reveal that external current boost creates additional poles and zeros that make system unstable.
Application of amplifier is a bite strange.
It is used as the Gate Driver with adjusted voltage.
I have connection of OpAmp and current boost stage.
In practice I have oscillation and I think that the reason for that could be multi-poles system.
Thank you.
Lets I make picture more readable.
I have non-inverting amplifier and I apply AC signal on the non-inverting input of op amp.
On the picture I have indicated three frequencies at which loop gain passes through G=1.
f1 = 6.5 Mhz (PM = 100)
f2 = 9 Mhz (PM = 160)
f3 = 18 Mhz (PM =...
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