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In CMOS bulk technology, snapback on ESD transistor is normally model by a MOS in parallel with BJT, plus avalanche trigger current. How do we model it on SOI transistor?
I would like to create a PCELL for layout and symbol. My question is how to add the terminal/pad name to the layout using SKILL (e.g. drain/gate/source/bulk) so that I can pass LVS?
Re: TDDB simulation using hspice
Hi
I am using hspice (K-2015.06). I saw the command .mosra in the manual having the parameter tddb, and the foundry said their hspice model support HIC/BTI/TDDB.
Syntax
.MOSRA RelTotalTime=time_value
+ [RelStartTime=time_value] [DEC=value] [LIN=value]
+...
Hi
I am trying to simulate reliability stress effect using hspice, I can simulate hci/bti effect (.mosra) by looking at id degration (.mosraprint). Can anybody advise me how to simulate TDDB in hspice, and what parameter I can check? (I can't find it in hspice manual).
Thanks!
Hi
I had a ESD NMOS transistor (with sab block) on pwell , which is surrounded with 1st ring (n+/pw), then 2nd middle ring (p+/pw), then 3rd outer ring (n+/dnwell).
My question is when I tried to measure IT2 of the ESD transistor, (with Vd=Vbias, Vg=vs=GND), how do the guard rings connect...
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